ANR Dirac-III-V

The project aims at studying electrons confined in quasi two-dimensional artificial honeycomb lattices which are specifically designed to generate complex band structures including Dirac cones. The superlattices are obtained by turning conventional III-V semiconductor heterostructures into triangular antidot lattices at the limit of quantum confinement. The patterns are defined by high resolution e-beam or block copolymer lithographies pushed to their limit in order to reach lattice parameters (periodicity) between 45 and 10 nm, allowing to obtain Dirac cones covering energy ranges up to tens of meV.